Shang-Chun (Luke) Lu

AI Research Faculty @ NCKU School of Computing and @ AI Startups

Connect with me at: X US: (872) 256-8653 TW: +886 6-2757575 # 80981

πŸŽ‰ Exciting News! Our project, "AI for Walking Stability Assessment with 3D Virtual Environment Training," together with Stanford researchers, has been selected by Nvidia for the 2025 Nvidia Academic Grant Award, granting us 32,000 A100 GPU-Hours!

🌟 We’re Hiring! Join our team! We invite brilliant AI researchers and passionate students worldwide, especially those excited about artificial spatial intelligence, reasoning LLMs, and robotics, to help advance this cutting-edge field!

My research focuses on Reasoning models, Agentic AI, Large Language Models (LLMs), Vision-Language Models (VLMs), and World Foundation Models for robotics.

Expertise in training advanced neural nets at companies including Intel, SanDisk, and more recently, AI startups.

I received my PhD in ECE from UIUC (2019), co-advised at MIT EECS 2017-2019, and a bachelor's degree from NTU Physics and a master's from NTU EE. Over 10 publications and 7 conference presentations.

Work Experience

Selected Conferences

  1. CoVaPh: A Vision-Language Multi-Agent System for Tool-Augmented Pharmacogenetic Reasoning and Personalized Guidance, S.-C. Lu et al., submitted to AAAI-26.
  2. Atomistic Design of Multilayer Black Phosphorus Vertical Tunnel FETs based on Coupled DFT and NEGF method, S.-C. Lu et al., 20th IWCN, Evanston, IL, May 20-24, 2019.
  3. Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for Ultra Low Power Logic Applications, S.-C. Lu et al., SISPAD 2018, Austin, TX, Sept. 24-26, 2018.
  4. Modeling of black phosphorus vertical TFETs without chemical doping for drain, S.-C. Lu et al., SISPAD 2017, Kamakura, Japan, Sept. 7-9, 2017.

Selected Journal Publications

  1. Superior Performance of 5 nm Gate Length GaN Nanowire nFET for Digital Logic Applications, Y. Chu, S.-C. Lu, et al., IEEE Electron Device Letters, vol. 40, no. 6, pp. 874-877, 2019.
  2. Novel Vertical Hetero- and Homo-junction Designs for Tunnel FETs based on 2D Crystals, S.-C. Lu, M. Mohamed, W. Zhu, 2D Materials 3, 011010, 2016.
  3. Electronic structures of defects and magnetic impurities in MoS2 monolayers, S.-C. Lu, J.-P. Leburton, Nanoscale Research Letters, 9:676, 2014.
  4. First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface, H.-C. Chang, S.-C. Lu, T.-P. Chou, et al., J. Appl. Phys. 111, 076105, 2012.
  5. Surface Passivation of Cu(In,Ga)Se2 Using Atomic Layer Deposited Al2O3, W.-W. Hsu, J. Y. Chen, T.-H. Cheng, et al., Appl. Phys. Lett. 100, 023508, 2012.