Luke (Shang-Chun) Lu

AI Research Faculty and Applied Physicist @ NCKU and @ AI Startups

Connect with me at: X US: (872) 256-8653 TW: +886 6-2757575 # 80981

πŸ”₯ Breaking News: We have successfully given an oral presentation in Trento, Italy on our 2026 ACL IWSDS "CoVaPh: A Vision-Language Multi-Agent Dialogue System for Tool-Augmented Pharmacogenetic Reasoning and Personalized Guidance"!

πŸŽ‰ Exciting News! Two of our projects have been selected by Nvidia for the 2025/2026 Nvidia Academic Grant Awards, granting each 32,000+ A100 GPU-Hours on dedicated DGX instances!

🌟 We’re Hiring! Join our team! We invite brilliant AI researchers and passionate students worldwide, especially those excited about spatial AI, reasoning VLMs/LLMs, and robotics, to help advance this cutting-edge field!

MY CURRENT RESEARCH FOCUSES:

Reasoning LLMs/VLMs, Agentic AI, Pixel-space Diffusion/VLMs for robotics World Models.

Experience in leading advanced neural nets research at tech companies, including Intel, SanDisk, and recently, with Nvidia and AI startups.

I received my PhD in ECE (2019), co-advised at MIT EECS in Cambridge, MA and UIUC and a bachelor's degree from NTU Physics and a master's from NTU EE. 10+ publications and 7+ conference presentations.

Work Experience

Selected Conferences

  1. Learning to Cascade: RL-Driven Orchestration of Hierarchical VLM Councils for Efficient Scientific Reasoning, S.-C. Lu, M.-C. Shih et al., submitted to the 43rd International Conference on Machine Learning (ICML 2026).
  2. CoVaPh: A Vision-Language Multi-Agent Dialogue System for Tool-Augmented Pharmacogenetic Reasoning and Personalized Guidance, S.-C. Lu, H. Yang et al., accepted for Oral at ACL IWSDS 2026.
  3. Atomistic Design of Multilayer Black Phosphorus Vertical Tunnel FETs based on Coupled DFT and NEGF method, S.-C. Lu et al., 20th IWCN, Evanston, IL, May 20-24, 2019.
  4. Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for Ultra Low Power Logic Applications, S.-C. Lu et al., SISPAD 2018, Austin, TX, Sept. 24-26, 2018.
  5. Modeling of black phosphorus vertical TFETs without chemical doping for drain, S.-C. Lu et al., SISPAD 2017, Kamakura, Japan, Sept. 7-9, 2017.

Selected Journal Publications

  1. Superior Performance of 5 nm Gate Length GaN Nanowire nFET for Digital Logic Applications, Y. Chu, S.-C. Lu, et al., IEEE Electron Device Letters, vol. 40, no. 6, pp. 874-877, 2019.
  2. Novel Vertical Hetero- and Homo-junction Designs for Tunnel FETs based on 2D Crystals, S.-C. Lu, M. Mohamed, W. Zhu, 2D Materials 3, 011010, 2016.
  3. Electronic structures of defects and magnetic impurities in MoS2 monolayers, S.-C. Lu, J.-P. Leburton, Nanoscale Research Letters, 9:676, 2014.
  4. First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface, H.-C. Chang, S.-C. Lu, T.-P. Chou, et al., J. Appl. Phys. 111, 076105, 2012.
  5. Surface Passivation of Cu(In,Ga)Se2 Using Atomic Layer Deposited Al2O3, W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S.-C. Lu, et al., Appl. Phys. Lett. 100, 023508, 2012.